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| DSEP 60-025A HiPerFREDTM Epitaxial Diode with soft recovery Preliminary data sheet VRSM V 250 VRRM V 250 DSEP 60-025A Type A C IFAV = 60 A VRRM = 250 V trr = 30 ns TO-247 AD C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 120C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3.5 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 60 600 1.6 0.4 -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Features * * * * * * * International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 Applications * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders TC = 25C mounting torque typical 230 0.8...1.2 6 Symbol IR Conditions TVJ = 25C; VR = VRRM TVJ = 150C;VR = VRRM IF = 60 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 650 2.5 1.07 1.31 0.65 0.25 A mA V V K/W K/W ns 6 A VF RthJC RthCH t rr IRM Advantages * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Dimensions see Outlines.pdf IF = 1 A; -di/dt = 300 A/s; VR = 30 V; TVJ = 25C VR = 100 V; IF = 130 A; -diF/dt = 100 A/s TVJ = 100C 30 5 Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Pulse Width = 300 s, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 237 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 1-1 |
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